Simultaneous Observation of SiO2 Surface and SiO2/Si Interface Using Self-Assembled-Monolayer Island
Simultaneous Observation of SiO2 Surface and SiO2/Si Interface Using Self-Assembled-Monolayer Island
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利用自组装单层岛同时观察 SiO2 表面和 SiO2/Si 界面
DOI：
10.1143/jjap.37.l214
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发表时间：
1998
影响因子：
1.5
通讯作者：
Y. Nishioka
中科院分区：
文献类型：
--
作者：
T. Komeda;Kenji Namba;Y. Nishioka
利用一种新颖的自组装单分子膜(SAM)岛，同时观察到了SiO_2表面和SiO_2/Si界面上的台阶，这些台阶是在原子平坦的Si(111)表面上形成SiO_2后残留在表面上的。在SiO_2表面形成十八烷基三氯硅烷(OTS)SAM岛后，用氢氟酸(HF)完全去除未被OTS-SAM覆盖的SiO_2层，暴露SiO_2/Si界面，然后进行原子力显微镜(AFM)观察。OTS-SAM岛下的SiO_2表面形貌清晰可见，其结构在浸入HF后仍保持不变。结果表明，SiO_2上的台阶和SiO_2/Si界面上的台阶没有发生横向移动，说明氧化过程中没有台阶流动以消除应力。
Steps on SiO2 surface and in SiO2/Si interface, which remain on the surface after the formation of SiO2 on atomically flat Si(111) surface, are simultaneously observed with a novel use of self-assembled-monolayer (SAM) islands. After the formation of octadecyltrichlorosilane (OTS) SAM islands on SiO2, SiO2 layers in the area which are not covered by OTS-SAM are completely removed by hydrofluoric acid (HF) to expose SiO2/Si interface, followed by atomic-force-microscopy (AFM) observation. OTS-SAM islands trace the morphology of SiO2 surface underneath, whose structure is preserved even after being dipped into HF. The results indicate that the steps on SiO2 and in the interface of SiO2/Si show no lateral shift, which suggests no step-flow during oxidation for stress relief.