Explicit screening full band quantum transport model for semiconductor nanodevices
Explicit screening full band quantum transport model for semiconductor nanodevices
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DOI：
10.1063/1.5031461
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发表时间：
2018-03
影响因子：
3.2
通讯作者：
Yuanchen Chu;Prasad Sarangapani;J. Charles;Gerhard Klimeck;T. Kubis
中科院分区：
文献类型：
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作者：
Yuanchen Chu;Prasad Sarangapani;J. Charles;Gerhard Klimeck;T. Kubis
半导体纳米器件的最新量子传输模型将负(正)单位电荷归因于导电(价)带的状态。能够实现带间隧道传输的混合态受到依赖于电荷贡献的产额模型的内插。在任何纳米器件结构中，这些模型依赖于器件和物理特定输入的介电常数。本文举例说明了不同电荷解释模型应用于超薄体晶体管性能预测时的巨大变异性。为了解决这一建模挑战，将纯电子能带结构模型扩展到原子量子输运。MOSFET和隧穿FET的性能预测证实了新模型的通用性和对附加屏蔽模型的独立性。
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This paper exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.