Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
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DOI：
10.1143/jpsj.79.013701
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发表时间：
2010-01
影响因子：
1.7
通讯作者：
T. Tayagaki;S. Fukatsu;Y. Kanemitsu
中科院分区：
文献类型：
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作者：
T. Tayagaki;S. Fukatsu;Y. Kanemitsu
我们报道了在所设计的Si 1-xGex/Si量子威尔斯阱（QWs）中，非辐射俄歇复合率被抑制.高密度激发下的光致发光强度强烈依赖于单量子阱的宽度，俄歇复合是更明显的宽威尔斯。这种依赖性表明俄歇复合速率依赖于在Si 1-xGex阱层中发现空穴的概率。讨论了一种通过波函数调控来控制非辐射俄歇复合率的方法：在耦合双量子阱中，通过改变势垒宽度来调控波函数的形状，从而降低俄歇复合率。
We report that nonradiative Auger recombination rate is suppressed in designed Si 1- x Ge x /Si quantum wells (QWs). The photoluminescence intensity under high-density excitation depends strongly on the width of single QWs, and Auger recombination is more pronounced for wide wells. This dependence shows that Auger recombination rate depends on the probability of finding holes in a Si 1- x Ge x well layer. A method of controlling nonradiative Auger recombination rate by wavefunction manipulation is discussed: in coupled double QWs, the wavefunction profile can be tuned by varying barrier width so as to reduce Auger recombination rate.