Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
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砷和镓注入具有薄自然氧化膜的硅中的退火行为
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
I. Kimura
中科院分区：
文献类型：
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作者：
K. Yokota;Susumu Tamura;S. Ishihara;I. Kimura
本文研究了Si中本征氧化膜对As和Ga注入退火行为的影响。虽然在退火过程中没有注入的As从固体中蒸发到环境气氛中，但是在1100°C的退火温度下，当剂量为1×1016 cm-2时，从Si扩散到自然氧化物膜中的注入As的量随着退火温度的升高而增加至2×1014 cm-2。另一方面，从固体蒸发到环境气氛中的注入Ga量随退火温度呈指数增加;在1100°C的退火温度下，Si中剩余的注入Ga量仅为1×1015 cm-2剂量的7%。
The influence of thin native oxide films (∼25 Å) on the annealing behavior of As and Ga implanted in Si has been studied. Although no implanted As evaporated from the solids into the ambient atmosphere during annealing, the amount of implanted As diffusing from the Si into the native-oxide films increased with the annealing temperature to 2×1014 cm-2 at a dose of 1×1016 cm-2 at an annealing temperature of 1100°C. On the other hand, the amount of implanted Ga evaporating from the solids into the ambient atmosphere increased exponentially with the annealing temperature; the amount of implanted Ga remaining in the Si was only 7% of the dose of 1×1015 cm-2 at an annealing temperature of 1100°C.