Field-effect transistors with thin films of perylene on SiO2 and polyimide gate insulators
Field-effect transistors with thin films of perylene on SiO2 and polyimide gate insulators
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DOI：
10.1063/1.2182024
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发表时间：
2006-03
影响因子：
4
通讯作者：
Toshio Ohta;T. Nagano;K. Ochi;Y. Kubozono;A. Fujiwara
中科院分区：
文献类型：
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作者：
Toshio Ohta;T. Nagano;K. Ochi;Y. Kubozono;A. Fujiwara
在SiO_2和聚酰亚胺栅绝缘层上制备了茂铁薄膜场效应管(FET)器件，并发现这两种器件都具有p沟道FET特性。采用SiO_2和聚酰亚胺栅绝缘层制备的薄膜FET器件在300K、10−~6Torr真空度下的场效应迁移率μ分别为7.0x10−3和3.7x10−4cm2V−1s−1。这些FET器件在暴露在空气中后被发现在大气条件下工作。在160~280K温度范围内，μ值随温度升高而增大，表现为跳跃载流子输运。
Field-effect transistor (FET) devices have been fabricated with thin films of perylene on SiO2 and polyimide gate insulators, and p-channel FET properties have been found in both FET devices. The perylene FET devices with SiO2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0×10−3 and 3.7×10−4cm2V−1s−1, respectively, at 300K under vacuum of 10−6Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160to280K, showing a hopping carrier transport.