Anisotropy effects on the performance of wurtzite GaN impact-ionization-avalanche-transit-time diodes
Anisotropy effects on the performance of wurtzite GaN impact-ionization-avalanche-transit-time diodes
复制标题
各向异性对纤锌矿GaN碰撞电离雪崩渡越时间二极管性能的影响
DOI：
10.7567/apex.9.111004
复制
发表时间：
2016-11-01
影响因子：
2.3
通讯作者：
Hao, Yue
中科院分区：
文献类型：
--
作者：
Dai, Yang;Yang, Lin'an;Hao, Yue
我们证明，GaN 碰撞电离雪崩渡越时间 (IMPATT) 二极管在基面（Gamma-M 方向）比沿 c 轴（Gamma-A 方向）表现出更高的频率和更宽的带宽。由于在高频下具有更好的效率、射频功率和负阻性能，因此使用Gamma-M方向的二极管更适合高频操作。此外，当比接触电阻接近10(-6)和接近10(-5)Ω.cm(2)时，二极管被截止。因此，p型GaN的非常高的比接触电阻大约类似于10(-4)Omega.cm(2)，这对pn结GaN IMPATT二极管的制造提供了重要的限制。 (C) 2016 日本应用物理学会
We demonstrate that a GaN impact-ionization-avalanche-transit-time (IMPATT) diode exhibits a higher frequency and a wider bandwidth in the basal plane (Gamma-M direction) than along the c-axis (Gamma-A direction). Because of the better efficiency, RF power, and negative resistance performance at a high frequency, the use of the diode in the Gamma-M direction is more appropriate for high-frequency operation. In addition, the diodes are cut off when the specific contact resistances are similar to 10(-6) and similar to 10(-5) Omega.cm(2). Thus, the very high specific contact resistance of p-type GaN of about similar to 10(-4) Omega.cm(2) provides an important limitation to the fabrication of pn junction GaN IMPATT diodes. (C) 2016 The Japan Society of Applied Physics