Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol−Gel-Derived Ni0.5Zn0.5Fe2O4/BaTiO3 Multiferroic Thin Film with High Magnetoelectric Coupling
Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol−Gel-Derived Ni0.5Zn0.5Fe2O4/BaTiO3 Multiferroic Thin Film with High Magnetoelectric Coupling
复制标题
高磁电耦合溶胶凝胶衍生 Ni0.5Zn0.5Fe2O4/BaTiO3 多铁性薄膜中掺杂诱导磁相取向机制
DOI：
10.1021/acs.jpcc.1c05122
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Piyi Du
中科院分区：
文献类型：
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作者：
Wei Tian;Guyao Li;Shuang Lv;Ning Ma;Zongrong Wang;Yu Tang;Piyi Du
在Si(111)衬底上成功地制备了用于高磁电耦合的1-3型铁磁/铁电复合薄膜。详细探讨了BaTiO_3(BTO)铁电相排列和隔离形成(111)取向Ni0.5Zn0.5Fe2O4(NZFO)磁相的控制机制。通过调整NZFO相中Ti4+的掺杂量和组成相组成，改变接触角和异相成核势垒，控制NZFO相以高结晶度生长，并以(111)晶面为主。当NZFO组分含量为0.9时，薄膜的接触角最小，∼小于10°，成核能力最强，结晶度最大，取向度为300.97。以1-3型复合薄膜为例，纳米BTO填充的0.9NZFO/0.1BTO复合薄膜在398-400K，接近BTO居里温度时，磁矩急剧下降高达44.8%。它代表了一种巨大的磁电耦合响应。了解这一现象的原因以及如何制备具有高磁电耦合特性的多铁性薄膜是一件有趣的事情。
1–3-Type ferromagnetic/ferroelectric multiferroic composite thin films for high magnetoelectric coupling have been fabricated successfully on Si(111) substrate. The mechanism of control of the formation of (111)-oriented Ni0.5Zn0.5Fe2O4(NZFO) magnetic phases arrayed in and isolated by ferroelectric phases of BaTiO3(BTO) was explored in detail. By adjusting the Ti4+doping content in the NZFO phase and the composition of constituent phases to change the contact angle and heterogeneous nucleation barrier, the NZFO phase was controlled to grow with high crystallinity and dominantly in the (111) orientation. Under an NZFO composition content of 0.9, the contact angle of the film is minimum, ∼10° or less; the nucleation ability of NZFO is the best; the crystallinity is the maximum; and the orientation degree is 300.97. Taking the 1–3-type composite thin films into consideration, 0.9NZFO/0.1BTO composite thin films with nano-BTO filled possessed high to 44.8% sharp drop of the magnetic moment at 398–400 K, around the Curie temperature of BTO. It represented a giant magnetoelectric coupling response. It is interesting to understand the reason and to know how to fabricate multiferroic thin films with high magnetoelectric coupling.