Uniform and concentrated read disturb effects in mid-1X TLC NAND flash memories for enterprise solid state drives
Uniform and concentrated read disturb effects in mid-1X TLC NAND flash memories for enterprise solid state drives
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DOI：
10.1109/irps.2017.7936387
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发表时间：
2017-04
期刊：
影响因子：
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通讯作者：
C. Zambelli;P. Olivo;L. Crippa;A. Marelli;R. Micheloni
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文献类型：
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作者：
C. Zambelli;P. Olivo;L. Crippa;A. Marelli;R. Micheloni
读取干扰是 TLC NAND 闪存中最重要的问题之一，因为它们的使用模型主要基于读取密集型应用。针对此问题的最先进的存储器测试和鉴定是通过以相同的读取量均匀地对存储器块施加压力来执行的。然而，通过分析多个工作负载，读取操作似乎主要集中在特定页面区域。在这项工作中，我们描述了中型 1X TLC NAND 闪存在均匀和集中的读取干扰下的不同行为。结果用于推测工作负载使用模型对使用不同纠错策略和数据管理策略的企业级固态硬盘可靠性的影响。
The read disturb is one of the most important issues in TLC NAND Flash memories since their usage model is predominantly based on read-intensive applications. The state-of-the-art testing and qualification of the memories against this issue is performed by uniformly stressing the memory blocks with same amount of reads. However, by analyzing several workloads, it appears that the read operations are mostly concentrated in specific page regions. In this work, we characterize the different behavior of a mid-1X TLC NAND Flash under uniform and concentrated read disturb. The results are used to speculate the implications of the workload usage model on the reliability of enterprise Solid State Drives using different error correction strategies and data management policies.