Towards understanding the emission efficiency of nitride quantum wells
Towards understanding the emission efficiency of nitride quantum wells
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DOI：
10.1002/pssa.200405051
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发表时间：
2004-09-01
影响因子：
2
通讯作者：
Rossow, U
中科院分区：
文献类型：
--
作者：
Hangleiter, A;Fuhrmann, D;Rossow, U
GaInN/GaN量子威尔斯阱的光发射的高量子效率，尽管通常大的缺陷密度仍然缺乏定量解释。从高效样品的效率的详细分析，我们发现，由于自由激子解离的辐射概率的减少是限制量子效率的主要机制。随机激子本地化被证明是只有一个很小的贡献。
The high quantum efficiency of light emission from GaInN/GaN quantum wells despite the typically large defect density still lacks a quantitative explanation. From a detailed analysis of the efficiency of highly efficient samples we find that a reduction of the radiative probability due to free exciton dissociation is the dominant mechanism limiting the quantum efficiency. Random exciton localization is shown to be only a minor contribution.