Effect of disorder‐induced band mixing on the conduction‐band effective mass of InAlGaAs alloys lattice matched to InP
Effect of disorder‐induced band mixing on the conduction‐band effective mass of InAlGaAs alloys lattice matched to InP
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DOI：
10.1063/1.362862
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发表时间：
1996-07
影响因子：
3.2
通讯作者：
J. Fan;Y. Chen
中科院分区：
文献类型：
--
作者：
J. Fan;Y. Chen
研究发现，五能带k⋅p理论计算出的InAlGaAs合金的有效质量小于最近报道的光学检测回旋共振的测量值。我们指出，必须考虑无序引起的导通价带混合的影响。这种产生电势波动的无序效应是为了减少k⋅p理论表达式中导通价带耦合的矩阵元素P2。电势波动的强度可以用与化学无序相关的电负性差异来描述。 (In0.53Al0.47As)x(In0.53Ga0.47As)1−x 四元系中包含的无序效应与测量数据非常吻合。
It is found that the calculation of the effective mass for InAlGaAs alloys obtained from the five‐band k⋅p theory is smaller than the measured value from the optically detected cyclotron resonance reported recently. We point out that the effect of disorder‐induced conduction valence band mixing must be considered. This disorder effect which creates potential fluctuations is to reduce the matrix element P2 for the conduction valence band coupling in the k⋅p theoretical expression. The strength of the potential fluctuations can be described in terms of the electronegativity difference related to chemical disorder. The inclusion of the disorder effect in the (In0.53Al0.47As)x(In0.53Ga0.47As)1−x quaternary system gives a very good fit to the measured data.