Pressure effect study on the I–V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Pressure effect study on the I–V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
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DOI：
10.1088/1674-1056/19/4/047310
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发表时间：
2010-04
影响因子：
1.7
通讯作者：
Li Qiuzhu;Wang Kai-qun;Jian Aoqun;Liu Xin;Zhang Bin-zhen
中科院分区：
文献类型：
--
作者：
Li Qiuzhu;Wang Kai-qun;Jian Aoqun;Liu Xin;Zhang Bin-zhen
This paper discusses the I–V property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I–V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
