Design and fabrication of a high-performance evanescently coupled waveguide photodetector
Design and fabrication of a high-performance evanescently coupled waveguide photodetector
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DOI：
10.1088/1674-1056/22/10/108503
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发表时间：
2013-10
影响因子：
1.7
通讯作者：
S. Liu 刘;X. Yang 杨;Y. Liu 刘;B. Li 李;Q. Han 韩
中科院分区：
文献类型：
--
作者：
S. Liu 刘;X. Yang 杨;Y. Liu 刘;B. Li 李;Q. Han 韩
本文介绍了一种工作在1.55 μm波段的倏逝耦合波导光电探测器的设计、制作和测量。该探测器主要由稀释波导、单模脊形波导和带有扩展光匹配层的p-i-n光电二极管组成。采用三维时域有限差分法（3D FDTD）对该结构的光学特性进行了研究。该光电探测器具有35 GHz以上的3 dB带宽和0.291 A/W的响应率，在1550 nm直接耦合到一个劈裂光纤。此外，超过72 mW的光功率的线性响应被实现，其中超过21 mA的光电流被获得在3V的反向偏置电压。
In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p—i—n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.