KC2: Key-Condition Crunching for Fast Sequential Circuit Deobfuscation

KC2: Key-Condition Crunching for Fast Sequential Circuit Deobfuscation
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KC2:快速顺序电路反混淆的关键条件处理

DOI:
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发表时间:
2019
期刊:
Design, Automation and Test in Europe
影响因子:
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通讯作者:
Yier Jin
Yier Jin
中科院分区:
--
文献类型:
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作者:
Kaveh Shamsi;Meng Li;D. Pan;Yier Jin

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逻辑锁定和IC封装是两种很有前途的技术,用于挫败一系列供应链威胁。逻辑锁定可以对代工厂和最终用户隐藏设计,并且IC封装可以阻止最终用户进行IC逆向工程。针对这些方案的Oracle引导的基于SAT的去混淆攻击使得以低开销安全地实现它们变得越来越困难。几乎所有关于SAT攻击的文献都集中在组合电路上。最近首次对时序电路实施的预言引导攻击显示,与组合电路相比,去混淆时间大幅增加。在本文中,我们将顺序SAT攻击与增量有界模型检查和密钥条件的动态简化(密钥条件压缩或KC 2)相结合,我们能够在基准电路上将顺序SAT攻击的运行时间减少两个数量级,显着减少顺序和组合去混淆之间的差距。这些技术也适用于组合去混淆,因此代表了对去混淆过程的一般改进,并有助于更好地理解去混淆的复杂性,以设计安全的锁定/加密方案。
Logic locking and IC camouflaging are two promising techniques for thwarting an array of supply chain threats. Logic locking can hide the design from the foundry as well as end-users and IC camouflaging can thwart IC reverse engineering by end-users. Oracle-guided SAT-based deobfuscation attacks against these schemes have made it more and more difficult to securely implement them with low overhead. Almost all of the literature on SAT attacks is focused on combinational circuits. A recent first implementation of oracle-guided attacks on sequential circuits showed a drastic increase in deobfuscation time versus combinational circuits. In this paper we show that integrating the sequential SAT-attack with incremental bounded-model-checking, and dynamic simplification of key-conditions (Key-Condition Crunching or KC2), we are able to reduce the runtime of sequential SAT-attacks by two orders of magnitude across benchmark circuits, significantly reducing the gap between sequential and combinational deobfuscation. These techniques are applicable to combinational deobfuscation as well and thus represent a generic improvement to deobfuscation procedures and help better understand the complexity of deobfuscation for designing secure locking/camouflaging schemes.
DOI: 10.1109/iccad.2017.8203759
发表时间: 2017-11
期刊: 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)
影响因子: --
作者:
H. Zhou;Ruifeng Jiang;Shuyu Kong
通讯作者: H. Zhou;Ruifeng Jiang;Shuyu Kong