Frequency-Improved 4H-SiC IGBT With Multizone Collector Design
Frequency-Improved 4H-SiC IGBT With Multizone Collector Design
复制标题
采用多区集电极设计的频率改进型 4H-SiC IGBT
DOI：
10.1109/ted.2019.2951021
复制
发表时间：
2020-01-01
影响因子：
3.1
通讯作者：
Zhang, Yuming
中科院分区：
文献类型：
--
作者：
Tang, Guannan;Tang, Xiaoyan;Zhang, Yuming
A novel 4H-SiC multizone collector vertical insulated-gate bipolar transistor (MZC-IGBT) with an alternate P+/P-/P+ multizone structure in the collector region is proposed and investigated by numerical simulations in this article. Comparing with conventional 4H-SiC IGBTs, lower potential barrier regions are formed in the proposed MZC-IGBT at the interface between the N field-stop buffer and the collector region, modifying the carrier extraction effect to a proper level and resulting in a superior tradeoff between the static and dynamic performances. The proposed device consumes less energy in a wide frequency range. The numerical simulation reveals that the average dissipation power of the optimized 4H-SiC MZC-IGBT can be decreased by 63.1% at a high frequency of 20 kHz and even 2.26% at a low frequency of 500 Hz, which makes the proposed device much more suitable for high-frequency applications.
