Voltage-controlled epitaxial strain in La0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)O3-PbTiO3(001) films -: art. no. 262502
Voltage-controlled epitaxial strain in La0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)O3-PbTiO3(001) films -: art. no. 262502
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DOI：
10.1063/1.2150273
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发表时间：
2005-12-26
影响因子：
4
通讯作者：
Paufler, P
中科院分区：
文献类型：
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作者：
Thiele, C;Dörr, K;Paufler, P
外延生长的La_（0.7）Sr_（0.3）MnO_3薄膜显示出由Pb（Mg_（1/3）Nb_（2/3））O_3-PbTiO_3（001）（PMN-PT）衬底的逆压电效应引起的电阻调制。在平面内的应变状态的膜可以连续调谐通过施加的压电电压PMN-PT。通过X射线测量在电场下量化PMN-PT（001）衬底的晶格变形。在300 K时，面内晶格参数的变化约为0.06%，使锰氧化物薄膜的电阻可逆地改变了9%，并使磁居里温度发生了变化。从50到290 nm的不同厚度的膜，提供不同的生长应变状态，已被研究。(c)2005年美国物理学会。
Epitaxially grown La0.7Sr0.3MnO3 thin films show resistance modulations induced by the inverse piezoeffect of the employed Pb(Mg1/3Nb2/3)O-3-PbTiO3(001) (PMN-PT) substrates. The in-plane strain state of the films can continuously be tuned by application of a piezovoltage to PMN-PT. The lattice deformation of a PMN-PT(001) substrate was quantified by x-ray measurements under an electric field. Variation of in-plane lattice parameters by similar to 0.06% reversibly changes the resistance of the manganite films by up to 9% at 300 K and shifts the magnetic Curie temperature. Films of different thicknesses from 50 to 290 nm, offering different as-grown strain states, have been studied. (c) 2005 American Institute of Physics.