Temperature dependence of the band gap in C60 crystals
Temperature dependence of the band gap in C60 crystals
复制标题
C60 晶体中带隙的温度依赖性
DOI：
10.1063/1.360969
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发表时间：
1996
影响因子：
3.2
通讯作者：
Chungwei Lin
中科院分区：
文献类型：
--
作者：
K. Chiu;Jyh;Chungwei Lin
从高质量C60晶体的透射光谱和光电导光谱推导出光允许直接带隙Eg(T)的温度依赖关系（13-300 K）。观察到强烈的温度依赖性Eg(T)，并将其归因于通过局域C60声子模式的电子-声子相互作用。此外，由于取向有序/无序相变，dEg/dT在249k左右发生了不连续变化。最后，观察到三个离散的局域带，并从光热电离的角度讨论了这些局域带的光传导。
The temperature dependence (13–300 K) of the optical‐allowed direct band gap Eg(T) deduced from the transmission and photoconductivity spectra in high‐quality C60 crystals is presented. A strong temperature‐dependent Eg(T) is observed and attributed to the electron–phonon interaction via the localized C60 phonon modes. In addition, a discontinuous change for dEg/dT around 249 K is reported due to the orientational order/disorder phase transition. Finally, three discrete localized bands are observed and the photoconduction for these localized bands is discussed in terms of photothermal ionization.