Electron affinity of cubic boron nitride terminated with vanadium oxide
Electron affinity of cubic boron nitride terminated with vanadium oxide
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氧化钒封端立方氮化硼的电子亲和势
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
R. Nemanich
中科院分区：
文献类型：
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作者：
Yu Yang;T. Sun;Joseph Shammas;M. Kaur;M. Hao;R. Nemanich
采用氧化钒封端的立方氮化硼（c-BN）表面实现了热稳定的负电子亲和力（NEA），并利用原位光电子能谱分析了其电子结构。采用电子回旋共振等离子体增强化学气相沉积技术，以BF 3和N2为前驱体制备了c-BN薄膜。在电子束沉积系统中，在c-BN表面上沉积厚度为0.1和0.5nm的钒层。通过氧等离子体处理实现金属层的氧化。在650 °C热退火后，c-BN表面上的钒氧化物被确定为VO 2，并且发现表面是热稳定的，表现出NEA。相比之下，检测到B2 O3的氧封端的c-BN表面显示出1.2eV的正电子亲和力。B2 O3明显地充当带负电荷的层，将表面偶极子引入c-BN中。通过VO 2与B2 O3层的相互作用，形成了B-O-V层。
A thermally stable negative electron affinity (NEA) for a cubic boron nitride (c-BN) surface with vanadium-oxide-termination is achieved, and its electronic structure was analyzed with in-situ photoelectron spectroscopy. The c-BN films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition employing BF3 and N2 as precursors. Vanadium layers of ∼0.1 and 0.5 nm thickness were deposited on the c-BN surface in an electron beam deposition system. Oxidation of the metal layer was achieved by an oxygen plasma treatment. After 650 °C thermal annealing, the vanadium oxide on the c-BN surface was determined to be VO2, and the surfaces were found to be thermally stable, exhibiting an NEA. In comparison, the oxygen-terminated c-BN surface, where B2O3 was detected, showed a positive electron affinity of ∼1.2 eV. The B2O3 evidently acts as a negatively charged layer introducing a surface dipole directed into the c-BN. Through the interaction of VO2 with the B2O3 layer, a B-O-V layer str...