Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition
Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition
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原子层沉积 MgO、Al2O3 和 MgAl2O4 薄膜的制备及表征
DOI：
10.1007/bf02665029
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发表时间：
1993
影响因子：
2.1
通讯作者：
A. Kitai
中科院分区：
文献类型：
--
作者：
R. Huang;A. Kitai
使用双环戊二烯基镁、三乙基铝和H2O通过原子层沉积（ALD）法在不同温度下在硅衬底上沉积了MgO、Al 2 O3和MgAl 2 O4薄膜，并进行了系统表征。高质量的多晶MgO薄膜在衬底温度高于500°C时沉积，非晶薄膜在400°C左右沉积。沉积的Al_2O_3和MgAl_2O_4薄膜为非晶态结构。ALD的适用性复杂的氧化物进行了讨论。
MgO, Al2O3 and MgAl2O4 thin films were deposited on silicon substrates at various temperatures by the atomic layer deposition (ALD) method using bis(cyclopentadienyl)magnesium, triethylaluminum, and H2O and were characterized systematically. High-quality polycrystalline MgO films were deposited for a substrate temperature above 500°C, and amorphous thin films were deposited around 400°C. The deposited Al2O3 and MgAl2O4 thin films were characterized as amorphous in structure. Applicability of ALD to complex oxides is discussed.