Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire
Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire
复制标题
电流对Co/Ni纳米线畴壁脱钉场的影响
DOI：
10.1143/jjap.50.073002
复制
发表时间：
2011
影响因子：
1.5
通讯作者：
T.Ono
中科院分区：
文献类型：
--
作者：
R.Hiramatsu;K.Kondou;T.Koyama;Y.Yoshimura;D.Chiba;S.Fukami;N.Ishiwata;T.Ono
通过测量垂直磁化Co/Ni纳米线的畴壁电阻，研究了畴壁结构对缺口宽度的依赖性。壁电阻突然增加低于43 nm的缺口宽度。将实验结果与壁面电阻的理论计算和壁面能量的微磁学模拟结果进行比较，发现壁面电阻的增加是由于切口宽度减小引起的壁面结构从Bloch壁到Néel壁的变化所引起的。
We have investigated the notch width dependence of the domain wall structure by measuring the wall resistances in Co/Ni nanowires with perpendicular magnetization. Wall resistance was abruptly increased below a notch width of 43 nm. By comparing the experimental results with theoretical calculations of wall resistance and the micromagnetic simulation of wall energy, this increase in wall resistance was found to be caused by the change in the wall structure from the Bloch to Néel wall caused by the decreased notch width.