Growth and Electrical Properties of Polymorphs of Mo-Te Crystals
Growth and Electrical Properties of Polymorphs of Mo-Te Crystals
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DOI：
10.1016/j.materresbull.2022.111796
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发表时间：
2022-02
影响因子：
5.4
通讯作者：
Hao-Min Lu;Lin Cao;Yucong He;S. Yao;Jian Zhou;Y. Lv;Y.B. Chen
中科院分区：
文献类型：
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作者：
Hao-Min Lu;Lin Cao;Yucong He;S. Yao;Jian Zhou;Y. Lv;Y.B. Chen
在本研究中，成功地生长了几种多晶型的Mo-Te（2 H-MoTe 2，1 T '-MoTe 2和Mo 3 Te 4）单晶。首次生长出Mo_3Te_4晶体。2 H-MoTe 2和1 T '-MoTe 2晶体的生长机制为二维逐层模式，而Mo 3 Te 4晶体的生长机制为三维模式。1 T '-MoTe 2和Mo 3 Te 4的电阻率随温度的变化符合金属的行为，它们的磁电阻（MR）与磁场的平方有关。Mo_3 Te_4的磁流变行为符合科勒定律（<50 K），表明Mo_3 Te_4是一种简单金属。与上述两种化合物不同，2 H-MoTe 2具有类似于超导体的迁移率-温度关系和大的线性磁电阻，大的迁移率与磁电阻之间的标度关系表明，线性磁电阻源于无序效应。生长态晶体的磁导率-温度行为符合第一性原理计算。本研究揭示了Mo-Te系统丰富的结构和电学性质。
In this study, several polymorphs of Mo-Te (2H-MoTe2, 1T’-MoTe2, and Mo3Te4) single crystals are successfully grown. Mo3Te4crystals are grown for the first time. The growth mechanism of 2H-MoTe2and 1T’-MoTe2crystals is a two-dimensional layer-by-layer mode, whereas that of Mo3Te4crystals is a three-dimensional mode. The temperature-dependent resistivity of 1T’-MoTe2and Mo3Te4follows the metallic behavior, and their magnetoresistance (MR) is dependent on the square of the magnetic field. And the MR behavior of Mo3Te4follows the Kohler's law (<50 K), strongly suggesting Mo3Te4is a simple metal. Different from above two compounds, 2H-MoTe2exhibits a semiconductor-like resistivity-temperature relationship and a large linear MR. The scale relationship between large mobility and MR suggests that the linear MR originates from disorder effects. The resistivity-temperature behaviors of as-grown crystals are in line with the first-principles calculations. This study reveals the rich structural and electrical properties of the Mo-Te system.