Difference of Near-Interface SiO2 Structures between O2-oxidation and H2O-oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics
Difference of Near-Interface SiO2 Structures between O2-oxidation and H2O-oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics
复制标题
4H-SiC(0001)O2氧化和H2O氧化近界面SiO2结构差异及其对MOS界面特性的影响
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
and Kei Ishinoda
中科院分区：
文献类型：
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作者：
Koji Kita;Hirohisa Hirai;and Kei Ishinoda
