Solid solutions of M2-2xIn2xS3 (M = Bi or Sb) by solventless thermolysis
Solid solutions of M2-2xIn2xS3 (M = Bi or Sb) by solventless thermolysis
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DOI：
10.1039/c9tc00148d
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发表时间：
2019-05-07
影响因子：
6.4
通讯作者：
Lewis, David J.
中科院分区：
文献类型：
--
作者：
Alqahtani, Tahani;Cernik, Robert J.;Lewis, David J.
合成了三（o -乙基黄原托）铋（iii） [Bi(S2COEt)(3)]、三（o -乙基黄原托）锑（iii） [Sb(S2COEt)(3)]和三（o -乙基黄原托）铟（iii） [In(S2COEt)(3)]，并采用无溶剂热裂解法制备了Bi-In- s和Sb-In- s固溶体。采用In(S2COEt)(3)和M(S2COEt)(3)分子前驱体，在300℃下加入不同摩尔分数的铟x (0 x 1)，得到了M2-2xIn2xS3（其中M = Bi或Sb）合金。利用粉末x射线衍射（p-XRD）、扫描电子显微镜（SEM）、能量色散x射线（EDX）光谱等一系列技术对合成的M2-2xIn2xS3样品进行了结构、组成、光学和形貌表征。拉曼光谱和紫外-可见吸收光谱。p-XRD数据表明，在M2S3中掺入高达0.4摩尔分数的铟并不会改变M2S3的正交晶型结构。较高数量的铟（x 0.6）改变晶体结构为立方M2S3。EDX数据的元素组成与预期的化学计量比一致。SEM图像显示，随着前驱体混合物中铟摩尔分数的变化，M2-2xIn2xS3 （0 x 1）样品的形貌发生了显著变化。混合样品M2-2xIn2xS3 （0 x 1）的元素映射显示M、In和S在每个样品中的均匀分布。Bi2-2xIn2xS3膜的带隙能在1.66 ~ 2.39 eV之间，而Sb2-2xIn2xS3膜的带隙能在2.19 ~ 2.9 eV之间，两者的带隙能都可以通过改变铟含量来调节。
Tris(O-ethylxanthato)bismuth(iii) [Bi(S2COEt)(3)], tris(O-ethylxanthato)antimony(iii) [Sb(S2COEt)(3)] and tris(O-ethylxanthato)indium(iii) [In(S2COEt)(3)] were synthesized and employed for the preparation of Bi-In-S and Sb-In-S solid solutions by solventless thermolysis. M2-2xIn2xS3 (where M = Bi or Sb) alloys were obtained using a mixture of In(S2COEt)(3) and M(S2COEt)(3) molecular precursors, with different mole fractions of indium x (0 x 1) at 300 degrees C. The structural, compositional, optical and morphological properties of the synthesized M2-2xIn2xS3 samples were characterized using a range of techniques including powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, Raman spectroscopy and UV-Vis absorption spectroscopy. The p-XRD data suggest that the incorporation of mole fractions of indium up to x 0.4 into M2S3 does not alter the orthorhombic crystal structure of M2S3. Higher quantities of indium (x 0.6) change the crystal structure to cubic M2S3. The elemental compositions from EDX data are in line with the stoichiometric ratios expected. SEM images reveal that the morphology of the M2-2xIn2xS3 (0 x 1) samples varies significantly with the changes in the indium mole fraction in the precursor mixture. Elemental mapping of the mixed samples M2-2xIn2xS3 (0 x 1) shows uniform elemental distributions of M, In and S in every sample investigated. The estimated band gap energies of Bi2-2xIn2xS3 films varies from 1.66 to 2.39 eV, while the band gap energies of Sb2-2xIn2xS3 films are in the range of 2.19-2.9 eV, and in both cases the energy can be tuned by variation of the indium content.