Significance of Small-Sized PbSe/PbS Core/Shell Colloidal Quantum Dots for Optoelectronic Applications
Significance of Small-Sized PbSe/PbS Core/Shell Colloidal Quantum Dots for Optoelectronic Applications
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DOI：
10.1021/jp500471s
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发表时间：
2014-06
影响因子：
3.7
通讯作者：
Diana Yanover;R. Vaxenburg;Jenya Tilchin;Anna Rubin-Brusilovski;Gary Zaiats;Richard Capek;A. Sashchiuk-A.-Sash
中科院分区：
文献类型：
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作者：
Diana Yanover;R. Vaxenburg;Jenya Tilchin;Anna Rubin-Brusilovski;Gary Zaiats;Richard Capek;A. Sashchiuk-A.-Sash
采用湿化学法合成了具有PbSe/PbS核/壳结构的IV-VI型半导体胶体量子点。通过理论计算与在不同温度下进行的连续波和瞬时光致发光测量的比较，确定了它们的电子性质。结果表明，形成的量子点禁带宽度在1μm左右可调，室温下S寿命大于4μ，光致发光量子产率为60%，且具有较长的抗氧化性。量子点的性质随核/壳结构的不同而不同，这有利于其在光电子学领域的应用。
Small-sized colloidal quantum dots (QDs) consisting of IV–VI semiconductors with the PbSe/PbS core/shell structure were synthesized by a specially developed wet-chemistry method. Their electronic properties were determined by the comparison of theoretical calculations with continuous-wave and transient photoluminescence measurements conducted at various temperatures. The results revealed the formation of quantum dots characterized by a tunable band gap around 1 μm, lifetime exceeding 4.0 μs at room temperature, photoluminescence quantum yield >60%, and resistance to oxidation for a relatively long period of time. The properties of the QDs vary with the core/shell architecture, which is beneficial for their optoelectronic applications.