Light Emission from Organic Single-Crystal Field-Effect Transistors
Light Emission from Organic Single-Crystal Field-Effect Transistors
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DOI：
10.1143/jjap.44.l1367
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发表时间：
2005-10
影响因子：
1.5
通讯作者：
K. Nakamura;M. Ichikawa;Rei Fushiki;Taketomi Kamikawa;Masamitsu Inoue;T. Koyama;Y. Taniguchi
中科院分区：
文献类型：
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作者：
K. Nakamura;M. Ichikawa;Rei Fushiki;Taketomi Kamikawa;Masamitsu Inoue;T. Koyama;Y. Taniguchi
我们演示了有机单晶场效应晶体管（fet）的电致发光。我们使用顶部触点结构的场效应管，分别以Au和Al（或MgAg）作为源极和漏极。器件表现出p型单极行为和光发射，这取决于栅极电压和漏极触点的金属种类。在漏极电流饱和区，光强增加。
We have demonstrated electroluminescence from field-effect transistors (FETs) of an organic single crystal. We used top-contact-configuration FETs with Au and Al (or MgAg) as source and drain electrodes, respectively. The devices exhibited p-type unipolar behavior and light emission depending on gate voltages and metal species of the drain contact. Moreover, the light intensity increased in the saturation region of drain current.