Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures
Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures
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Nb/Al2O3/Al/MgB2 大面积薄膜异质结构中的约瑟夫森效应
DOI：
10.1063/1.1472470
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发表时间：
2002
影响因子：
4
通讯作者：
G. Grassano
中科院分区：
文献类型：
--
作者：
G. Carapella;N. Martucciello;G. Costabile;C. Ferdeghini;V. Ferrando;G. Grassano
本文报道了Nb/Al_2 O_3/Al/MgB_2薄膜异质结的直流和交流约瑟夫森效应。该异质结构具有中等滞后的电流-电压特性，具有直流约瑟夫森电流分支和规则的微波诱导夏皮罗台阶。从电导谱，约2 meV的间隙在7.7 K的MgB 2电极的近似表面估计。
We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current–voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode.