Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
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DOI：
10.1143/jjap.51.06fd02
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发表时间：
2012-06-01
影响因子：
1.5
通讯作者：
Suemitsu, Maki
中科院分区：
文献类型：
--
作者：
Ide, Takayuki;Kawai, Yusuke;Suemitsu, Maki
石墨烯在微加工Si（111）上形成的3C-SiC（111）上的外延已经被证明。通过光学显微镜、显微拉曼光谱、低能电子衍射和光电子能谱的观察，已经证实外延石墨烯是Bernal堆叠的，在石墨烯和3C-SiC膜之间存在缓冲层，这可以导致逻辑操作所需的带隙的打开。石墨烯的质量通过图案的收缩得到改善。这些结果表明，使用微加工衬底的硅上石墨烯是一种有前途的材料，用于实现石墨烯基器件。(C)2012日本应用物理学会
The epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations by optical microscopy, micro-Raman spectroscopy, low-energy electron diffraction, and photoelectron spectroscopy, it has been confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between graphene and the 3C-SiC film, which can lead to the opening of the band gap necessary for logic operations. The quality of graphene is improved by the shrinkage of the pattern. These results indicate that graphene on silicon using the microfabricated substrate is a promising material for the realization of graphene-based devices. (C) 2012 The Japan Society of Applied Physics