Integrated thin film magneto-impedance sensor head using plating process
Integrated thin film magneto-impedance sensor head using plating process
复制标题
采用电镀工艺的集成薄膜磁阻抗传感器头
DOI：
10.1109/20.800617
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
U. Uchiyama
中科院分区：
文献类型：
--
作者：
A. Takayama;T. Umehara;A. Yuguchi;H. Kato;K. Mohri;U. Uchiyama
为了解决非晶丝MI头的问题，研制了一种集成的薄膜MI(磁阻抗)传感头，它由薄膜NiFe MI元件和薄膜偏置和负反馈线圈采用微镀技术相结合而成。该传感头表现出很高的磁场检测灵敏度，脉冲电流磁化后的灵敏度约为0.41%/A/m(33%/Oe)，外加磁场变化时具有较小的磁滞。我们用一对薄膜MI传感头制作了差动型传感器模块。该传感器的输出电压在/SPL+MN/80A/m范围内具有良好的线性关系，电压为25 mV/A/m(2.0V/Oe)，在0.1A/m/SPL deg/C范围内具有较小的热漂移。传感器模块的功耗为165 mW。
An integrated thin film MI (magneto-impedance) sensor head constructed with a combination of a thin film NiFe MI element and thin film bias and negative feedback coils using a micro-plating technology, has been developed in order to solve the problems of an amorphous wire MI head. The sensor head showed a very high field-detection sensitivity of about 0.41%/A/m (33%/Oe) magnetized with pulse current and a small hysteresis for the change of an external field. We have fabricated a differential type sensor module using a pair of the thin film MI sensor heads. The output voltage of the sensor has a good linearity within the range of /spl plusmn/80 A/m, and the voltage was 25mV/A/m(2.0V/Oe), and has small thermal drift within 0.1 A/m/spl deg/C. The consumption power of the sensor module was 165 mW.