Band structure and Fermi surface of URu 2 Si 2 studied by high-resolution angle-resolved photoemission spectroscopy
Band structure and Fermi surface of URu 2 Si 2 studied by high-resolution angle-resolved photoemission spectroscopy
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DOI：
10.1103/physrevb.60.13390
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发表时间：
1999-11
影响因子：
3.7
通讯作者：
T. Ito;H. Kumigashira;T. Takahashi;Y. Haga;E. Yamamoto;T. Honma;H. Ohkuni;Y. Ōnuki
中科院分区：
文献类型：
--
作者：
T. Ito;H. Kumigashira;T. Takahashi;Y. Haga;E. Yamamoto;T. Honma;H. Ohkuni;Y. Ōnuki
我们对单晶 ${\mathrm{URu}}_{2}{\mathrm{Si}}_{2}$ 进行了高分辨率角分辨光电子能谱 (ARPES)，以研究顺磁相的能带结构和费米面。由 Ru $4d$ 和 Si $3p$ 态组成的价带结构表明 ARPES 实验和能带结构计算之间在质量上具有良好的一致性。在费米能级 ${(E}_{F}),$ 附近，我们观察到一个色散较小的带，它穿过布里渊区 Z 点和 X 点之间的 ${E}_{F}$ 中间。与能带计算以及 de Haas\char21{}van Alphen (dHvA) 结果的比较表明，${E}_{F}$ 附近的实验能带被分配给以 Z 点为中心的最大空穴，其具有很强的 U $5f\ensuremath{-}\mathrm{Ru}4d$ 杂化特征。与能带结构计算相比，观察到的近 ${E}_{F}$ 能带显着变窄，这表明由于 U $5f$ 电子的电子相关性而产生了强烈的重正化效应。
We have performed a high-resolution angle-resolved photoemission spectroscopy (ARPES) on single-crystal ${\mathrm{URu}}_{2}{\mathrm{Si}}_{2}$ to study the band structure and the Fermi surface in the paramagnetic phase. The valence-band structure consisting of the Ru $4d$ and Si $3p$ states shows a qualitatively good agreement between the ARPES experiment and the band-structure calculation. In the vicinity of the Fermi level ${(E}_{F}),$ we observed a less dispersive band, which crosses ${E}_{F}$ midway between the Z and X points in the Brillouin zone. Comparison with the band calculation as well as with the de Haas\char21{}van Alphen (dHvA) result suggests that the experimental band near ${E}_{F}$ is assigned to the largest hole pocket centered at the Z point, which has a strong U $5f\ensuremath{-}\mathrm{Ru}4d$ hybridized character. The observed remarkable narrowing of the near-${E}_{F}$ band compared with the band-structure calculation suggests a strong renormalization effect due to the electron correlation of U $5f$ electrons.