Printed Nanolaser on Silicon
Printed Nanolaser on Silicon
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硅上印刷纳米激光
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Myung
中科院分区：
文献类型：
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作者：
Jungmin Lee;I. Karnadi;J. Kim;Yong;Myung
我们提出并证明了一个直接集成的波长级III-V纳米激光器到绝缘体上硅（SOI）波导。通过采用高精度的微转印技术，与优化设计的光子晶体纳米激光器的结构，我们在实验上实现了InGaAsP纳米束激光器和SOI波导之间的耦合效率为83%。我们的III-V族纳米束激光器被设计为非对称一维光子晶体腔，其允许以高效率单向耦合到组合的III-V族纳米束波导。通过在III-V和SOI波导以3.2 μm的最佳长度重叠的区域中的紧凑垂直耦合器，来自印刷III-V纳米激光器的88%的光理论上可以耦合到垂直集成的SOI波导。
We propose and demonstrate a direct integration of a wavelength-scale III–V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III–V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III–V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III–V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III–V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.