A fast switching, high isolation absorptive SPST SiGe switch for 24 GHz automotive applications
A fast switching, high isolation absorptive SPST SiGe switch for 24 GHz automotive applications
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适用于 24 GHz 汽车应用的快速开关、高隔离度吸收型 SPST SiGe 开关
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
A. Jenkins
中科院分区：
文献类型：
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作者：
I. Gresham;A. Jenkins
给出了一种高隔离度、极快速开关的单刀单掷SiGe开关的测试结果。该开关在15 GHz-26 GHz范围内的输入和输出之间提供/spl sim/35 dB的隔离，但尺寸仅为500 /spl mu/m/spl倍/250 /spl mu/m。一种新颖的负载电路确保了在透射和吸收状态之间开关的输入反射系数几乎没有可察觉的变化。在发射状态下，开关为14.2 GHz和25.5 GHz之间的输入信号提供增益，并且具有超过12 GHz的1dB损耗带宽。最后，恒流偏置方案的使用允许在状态之间极快地切换，从而允许开关用于在24 GHz的载波频率下生成长度为200 pS的RF脉冲，其中上升和下降时间约为60 pS。整个开关（包括偏置电路）在+5 V电源下仅需12 mA电流。
Measured results for a high isolation, extremely fast switching SPST SiGe switch are presented. The switch provides /spl sim/35 dB of isolation between input and output over 15 GHz-26 GHz, yet is only 500 /spl mu/m/spl times/250 /spl mu/m in size. A novel load circuit ensures that there is almost no perceptible change in the input reflection coefficient of the switch between the transmission and the absorptive state. In the transmit state the switch provides gain for the input signal between 14.2 GHz and 25.5 GHz, and has a 1dB loss bandwidth of over 12 GHz. Lastly, the use of a constant current biasing scheme allows extremely fast switching between states allowing the switch to be used to generate RF pulses of 200 pS in length at a carrier frequency of 24 GHz, with rise and fall times of approximately 60 pS. The entire switch, including biasing circuitry, requires only 12 mA from a +5 V supply.