Path to achieve sub-10-nm half-pitch using electron beam lithography
Path to achieve sub-10-nm half-pitch using electron beam lithography
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DOI：
10.1116/1.3532938
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发表时间：
2011-01-01
影响因子：
1.4
通讯作者：
Chong, T. C.
中科院分区：
文献类型：
--
作者：
Tavakkoli K. G, A.;Piramanayagam, S. N.;Chong, T. C.
获得高密度、高分辨率的图形是微纳电子学应用的关键一步。基于纳米尺度特征之间的机械强度和毛细作用力，作者提出使用薄层抗蚀剂是实现密集图案阵列的一种解决方案。因此，作者研究了抗蚀剂厚度对线条和网点致密图案分辨率的影响。基于倍半硅氧烷氢胶的实验结果，获得了半间距小于10 nm的致密图形。作者还提出了一种计算纳米结构对比度的新方法。(C)2011年美国真空协会。[DOI：10.1116/1.3532938]
Achieving dense patterns with good resolution is a key step for several applications in micro-and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3532938]