Electronic structure evolution and energy level alignment at C60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces
Electronic structure evolution and energy level alignment at C60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces
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DOI:
10.1063/1.4873959
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发表时间:
2014-04-28
影响因子:
3.2
通讯作者:
Gao, Yongli
中科院分区:
文献类型:
--
作者:
Liu, Xiaoliang;Yi, Shijuan;Gao, Yongli
The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C-60)/4,4'-cyclohexylidenebis[N, N-bis(4-methylphenyl) benzenamine] (TAPC)/molybdenum oxide (MoOx)/indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C-60 on TAPC, a dipole of 0.27 eV was observed at the C-60/TAPC heterojunction due to the electron transfer from TAPC to C-60. This led to a drop of the HOMO of TAPC near the C-60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C-60, similarly creating a built-in field in C-60 film and improving the electron transfer away from the C-60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C-60/TAPC-based organic photovoltaic cells. (C) 2014 AIP Publishing LLC.