Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding
Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding
复制标题
DOI：
10.1109/16.842956
复制
发表时间：
2000-06
影响因子：
3.1
通讯作者：
S. Marazita;W. Bishop;J. Hesler;K. Hui;W. Bowen;T. Crowe
中科院分区：
文献类型：
--
作者：
S. Marazita;W. Bishop;J. Hesler;K. Hui;W. Bowen;T. Crowe
A novel wafer bonding process has been used to integrate high quality GaAs devices on quartz substrates. The method of adhesion by spin-on-dielectric temperature enhanced reflow (MASTER) uses a spin-on-dielectric as a bonding agent to achieve a robust bond that in no way degrades either high frequency performance or reliability. A 585 GHz integrated mixer fabricated using this process has achieved record double-sideband mixer noise temperatures of 1,150 K at room temperature and 880 K at 77 K. Furthermore, the integrated mixers require no mechanical tuning, are easy to assemble, and repeatable. Precise control of the circuit geometry, coupled with the reduction of parasitic elements, allows greater accuracy of computer simulations and will therefore lead to better high frequency performance and bandwidth. This new technology is easily extended to other circuit designs and will allow the development of a new generation of submillimeter-wave integrated circuits.
