Manufacturing of Er 3+ -doped planar waveguides on silica-on-silicon using femtosecond laser-induced plasma
Manufacturing of Er 3+ -doped planar waveguides on silica-on-silicon using femtosecond laser-induced plasma
复制标题
使用飞秒激光诱导等离子体在硅基二氧化硅上制造 Er 3 掺杂平面波导
DOI：
10.1016/j.optcom.2022.128614
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发表时间：
2022
影响因子：
2.4
通讯作者：
Pal P
中科院分区：
文献类型：
--
作者：
Pal P
我们报道了在硅基二氧化硅（SOS）晶片上的掺铒平面波导的制备和特性--提供低损耗和强光限制，适用于光纤通信C波段（1530-1565 nm）的工程光波导放大器。在这里，我们描述了一种超快激光等离子体掺杂（ULPD）技术，该技术使用重复率为10 kHz、脉冲持续时间为45 fs的飞秒激光（波长800 nm）诱导的等离子体进行。本文提出的ULPD方法已成功地应用于SOS衬底上的稀土材料掺杂，先前使用的飞秒激光器的脉冲宽度为100 fs，重复频率为1 kHz。在SOS衬底上制作的平面光波导层的厚度，折射率，光传输损耗，光致发光强度，和光致发光寿命进行了分析。我们报告了在C波段的低传播损耗< 0.4 dB/cm，在1532 nm处的长寿命为13.21 ms，最大寿命密度积为6.344× 10 19 s cm− 3。低损耗平板波导和高寿命密度的产品保证了在SOS平台上制造条形加载波导的进一步可能性。所提出的有源波导制造方法对于制造与硅基光子集成电路兼容的平面集成光波导放大器和激光器是潜在有用的。
We report fabrication and characterisation of the erbium-doped planar waveguide on a silica-on-silicon (SOS) wafer-offering low loss and strong light confinement suitable for engineering optical waveguide amplifier for the C-band (1530–1565 nm) of the optical fibre communication. Here we describe an ultrafast laser plasma doping (ULPD) technique that is carried out using the plasma induced by a femtosecond laser (wavelength 800 nm) with a repetition rate of 10 kHz and a pulse duration of 45 fs. The ULPD method presented here had been applied successfully for rare earth materials doping on SOS substrates previously using a fs-laser with a pulse duration of∼ 100 fs and at a repetition rate of 1 kHz. The fabricated planar optical waveguide layer onto the SOS substrate has been analysed for thickness, refractive index, optical propagation loss, photoluminescence intensity, and photoluminescence lifetime. We report a low propagation loss of< 0.4 dB/cm in the C-Band, a long lifetime of 13.21 ms at 1532 nm, and the largest lifetime-density product 6.344× 10 19 s cm− 3. The low loss planar slab waveguide and a high lifetime-density product promise the further possibility of fabricating strip-loaded waveguides on the SOS platform. The proposed active waveguide fabrication methodology is potentially useful for manufacturing planar integrated optical waveguide amplifiers and lasers compatible with silicon-based photonic integrated circuits.