Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
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DOI：
10.1016/j.tsf.2013.10.064
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发表时间：
2014-04-30
期刊：
影响因子：
2.1
通讯作者：
Schulze, Joerg
中科院分区：
文献类型：
--
作者：
Oehme, Michael;Kostecki, Konrad;Schulze, Joerg
在Si衬底上生长了应变和非应变GeSn层，Sn含量分别为20%和25%。所有的亚稳态层结构的超低温分子束外延工艺制造的装置。探讨了Sn含量、生长温度和两种不同应变值（无应变、压缩应变）的亚稳层的有用厚度。外延击穿厚度限制了有用的厚度范围，随着生长温度和Sn浓度的增加而呈指数下降。(c)2013爱思唯尔有限公司版权所有。
Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to 20% and 25%, respectively. All metastable layer structures were fabricated by means of an ultra-lowtemperature molecular beam epitaxy process. The useful thickness of the metastable layers for a range of Sn contents, growth temperatures and two different strain values (unstrained, compressive strained) is explored. The epitaxial breakdown thickness which limits the useful thickness range decreases exponentially with increasing growth temperature and Sn concentration. (c) 2013 Elsevier B.V. All rights reserved.