Hydrogenated Amorphous Silicon Thin Film Transistors (a Si: H TFTs)
Hydrogenated Amorphous Silicon Thin Film Transistors (a Si: H TFTs)
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氢化非晶硅薄膜晶体管（a Si:H TFT）
DOI：
10.1007/978-3-540-79567-4_47
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
A. J. Flewitt
中科院分区：
文献类型：
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作者：
A. J. Flewitt
©施普林格瑞士国际出版社2016。氢化非晶硅使有源矩阵液晶显示器在平板显示市场占据主导地位，并取代阴极射线管成为领先的显示技术。这是可制造性胜过性能的胜利。氢化非晶硅薄膜晶体管有几个基本的性能限制，这些限制与非晶材料的物理特性直接相关。然而，非晶结构加上等离子体增强化学气相沉积（PECVD）的使用，使得器件在非常大面积的显示背板上具有出色的再现性和均匀性。因此，材料限制是可以容忍的，工程解决方案可以减轻其影响。
© Springer International Publishing Switzerland 2016. Hydrogenated amorphous silicon has enabled the active matrix liquid crystal display to dominate the flat panel display market and indeed has supplanted the cathode-ray tube as the leading display technology. This is the triumph of manufacturability over performance. Hydrogenated amorphous silicon thin-film transistors have several fundamental performance limitations which are directly linked to the physics of the amorphous material. However, the amorphous structure coupled with the use of plasma-enhanced chemical vapor deposition (PECVD) allows devices to be manufactured with exceptional reproducibility and uniformity over very large-area display backplanes. Consequently, the material limitations are tolerated and engineering solutions found to mitigate their effects.