Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE
Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE
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MOVPE 在 GaAs(111)B、GaAs(100)、InP(111)B、InP(100) 上金辅助生长 InAs 纳米线
DOI：
10.1002/pssc.201200593
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Shimomura and T. Waho
中科院分区：
文献类型：
--
作者：
S. Murakami ;H. Funayama ;K. Shimomura and T. Waho
研究了用MOVPE法生长Au辅助生长InAs NWS。我们将讨论在(111)B和(100)取向的GaAs和InP衬底上的原子核的特性，以及生长过程中的V/III比。我们观察了纳米颗粒在各衬底上的生长方向，证实了纳米颗粒的表面扩散与颗粒直径有关。在GaAs(111)B衬底上，NWS的直径和长度取决于NWS的局域密度。此外，随着V/III比的降低，锥形NWS减小。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Au‐assisted growth of InAs NWs by MOVPE growth was investigated. We will discuss the NWs characteristics on GaAs and InP substrate with (111)B and (100) orientation, and on the V/III ratio during the growth. We have observed the growth direction of NWs on each substrates and confirmed that the surface diffusion have relation to the diameter of NWs. In the GaAs (111)B substrate, the diameter and length of NWs were depended on the local density of NWs. Furthermore, the tapered NWs were decreased by lowering the V/III ratio. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)