Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
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DOI：
10.1063/1.4887065
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发表时间：
2014-07-07
影响因子：
4
通讯作者：
Boucaud, P.
中科院分区：
文献类型：
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作者：
Roland, I.;Zeng, Y.;Boucaud, P.
我们展示了一个二维独立的氮化镓光子晶体平台，工作在1550纳米左右，并在硅衬底上制造。宽度调制波导腔是集成的，在1575纳米处显示负载质量因子高达34000。我们通过改变空气孔半径与周期性的比值和空腔孔位移来证明共振的可调性。我们从腔面内传输的功率依赖性推断出悬浮氮化物结构的线性吸收损耗为7.9 dB/cm。(C) 2014 AIP出版有限责任公司
We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a similar to 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission. (C) 2014 AIP Publishing LLC.