Precise Chrome Etching in Downstream Chlorine Plasmas with Electron Depletion Through Negative Ion Production
Precise Chrome Etching in Downstream Chlorine Plasmas with Electron Depletion Through Negative Ion Production
复制标题
通过产生负离子，在下游氯等离子体中进行精确的铬蚀刻，并消耗电子
DOI：
10.1149/1.1394055
复制
发表时间：
2000
影响因子：
3.9
通讯作者：
Y. Horiike
中科院分区：
文献类型：
--
作者：
T. Ichiki;S. Takayanagi;Y. Horiike
在低至0.1 μm级器件的微图案化中，光刻需要Chrome（Cr）掩模的高度精确的微制造。在本文中，我们报告的垂直Chrome蚀刻使用电子束（EB）抗蚀剂掩模在下游的氯等离子体，在蚀刻过程中的抗蚀剂损伤可以抑制，因为通过负离子的生产减少电子密度。虽然纯Cl 2下游等离子体中的Cr蚀刻速率仅为15 A/min，但1%的微量氧添加导致Cr蚀刻速率的大幅度增加，高达20倍，而抗蚀剂蚀刻速率仅增加两倍。虽然各向同性铬蚀刻反应与氯和氧自由基造成的底切功能，适当的衬底偏置允许垂直图案化的0.2 μm宽的线和空间，由于侧壁保护的副产品从蚀刻铬和抗蚀剂的再沉积。
In micropatterning down to 0.1 μm class devices, photolithography requires highly accurate microfabrication of chrome (Cr) reticle masks. In this paper we report the vertical chrome etching using electron beam (EB) resist masks in downstream chlorine plasmas, where the resist damage during etching can be suppressed because of the reduced electron density through negative ion production. Though the Cr etch rate in pure Cl 2 downstream plasmas was only 15 A/min. slight oxygen addition of 1% resulted in a great increase of Cr etch rates as large as 20 times, while resist etch rates increased only twice. Though isotropic Cr etching reactions with chlorine and oxygen radicals caused undercut features, appropriate substrate biasing allows vertical patterning of 0.2 μm wide lines and spaces due to sidewall protection by redeposition of by-products from etched Cr and resists.