Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
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DOI：
10.1049/el.2015.0331
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发表时间：
2015-05-28
影响因子：
1.1
通讯作者：
Yu, S. -Q.
中科院分区：
文献类型：
--
作者：
Pham, T. N.;Du, W.;Yu, S. -Q.
研制了高性能的Si基Ge_（0.9）Sn_（0.1）光电导红外探测器。该器件制造与互补金属氧化物半导体（CMOS）工艺完全兼容。室温响应度在1.55 μ m为0.26 A/W，与市售的InGaAs和Ge光伏探测器。温度依赖性研究表明，在77 K时，峰值响应率增加到2.85 A/W。的光谱响应有一个长波截止为2.4和2.2 μ m，在300和77 K，分别。计算了比探测率（D*），并与市场上占主导地位的红外探测器的D* 进行了比较。
High performance Si-based Ge0.9Sn0.1 photoconductive infrared detectors have been demonstrated. The device fabrication is fully compatible with the complementary metal-oxide-semiconductor (CMOS) process. The room temperature responsivity at 1.55 mu m is 0.26 A/W and comparable with that of commercially available InGaAs and Ge photovoltaic detectors. Temperature-dependent study shows an increased peak responsivity of 2.85 A/W at 77 K. The spectral response has a longwave cutoff of 2.4 and 2.2 mu m at 300 and 77 K, respectively. Specific detectivity (D*) was calculated and compared side by side with D* of market dominating infrared detectors.