Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry
Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry
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DOI：
10.1063/1.368384
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发表时间：
1998-11
影响因子：
3.2
通讯作者：
N. Bhat;K. Saraswat
中科院分区：
文献类型：
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作者：
N. Bhat;K. Saraswat
高场应力下边界陷阱的产生以快速热退火低压化学气相沉积栅氧化物为特征。利用高频电容-电压曲线的滞后性来表征边界陷阱。结果表明，至少部分边界陷阱与俘获正电荷无关。边界陷阱通过电子在衬底之间的隧穿进行充电和放电。磁滞与温度无关，证实了隧道效应模型。不同退火气氛的影响表明，边界陷阱的产生依赖于衬底界面的物理应力，并用傅里叶变换红外光谱对其进行了定性测量。边界陷阱的产生归因于高能电子在衬底界面的键断裂。
The border trap generation under high field stressing has been characterized in rapid thermal annealed low pressure chemical vapor deposited gate oxides. The hysteresis in high frequency capacitance–voltage curve is used to characterize the border traps. It is shown that at least some of the border traps are not associated with trapped positive charge. The border traps are charged and discharged through electrons tunneling from and to the substrate. The hysteresis is independent of temperature confirming the tunneling model. The effects of different annealing ambients suggest that the border trap generation depends on the physical stress at the substrate interface, which is qualitatively measured using Fourier transform infrared spectroscopy. The border trap generation is attributed to bond breaking at the substrate interface by energetic electrons.