Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology
Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology
复制标题
多层氧化技术中CVD-TiN栅电极中残留氯对栅氧化层可靠性的影响
DOI：
10.1143/jjap.40.2679
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
Takayuki Yamada
中科院分区：
文献类型：
--
作者：
M. Moriwaki;Takayuki Yamada
研究了化学气相沉积（CVD）TiN栅工艺对栅氧化层完整性的影响。与薄氧化物相比，厚氧化物的栅极漏电流特性和栅极氧化物的可靠性通过1000°C退火而急剧下降。通过X射线光电子能谱（XPS）和热脱附谱（TDS）分析，氧化物的退化被证实是由于形成一个薄弱点诱导的残留Cl从TiN栅电极到栅极氧化物的外扩散。在高温退火期间，向外扩散的Cl与氧化物中的缺陷反应并形成陷阱位点。作为泄漏路径的薄弱点似乎是具有大量Cl相关陷阱位点的局部点。控制CVD金属栅中的杂质是实现未来多层栅氧化层技术的关键。
Influences of the chemical vapor deposition (CVD)-TiN gate process on gate oxide integrity have been studied. The gate leakage characteristic and reliability of the gate oxide were drastically degraded by 1000°C annealing for thick oxide as compared to for thin oxide. By X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) analyses, the oxide degradation is confirmed to be due to the formation of a weak spot induced by out-diffusion of residual Cl from the TiN gate electrode into the gate oxide. Out-diffused Cl reacts with defects in the oxide during the high-temperature anneal and forms trap sites. The weak spot which acts as a leakage path appears to be the local spot which has a larger amount of Cl-related trap sites. Controlling of impurities in the CVD metal gate is a key for realizing future multiple-thickness gate oxide technology.