The effect of the interface oxidation on tunneling conductance of Co2MnSi/MgO/Co2MnSi magnetic tunnel junction
The effect of the interface oxidation on tunneling conductance of Co2MnSi/MgO/Co2MnSi magnetic tunnel junction
复制标题
DOI：
10.1088/0953-8984/21/6/064245
复制
发表时间：
2009-01
期刊：
影响因子：
--
通讯作者：
Y. Miura;K. Abe;M. Shirai
中科院分区：
文献类型：
--
作者：
Y. Miura;K. Abe;M. Shirai
基于第一性原理计算，研究和讨论了界面氧化对Co2 MnSi/MgO/Co2 MnSi（001）磁性隧道结（MTJ）电子结构和隧道电导的影响.结果发现，MnSi终止倾向于被氧化相比，Co终止，因为在MnSi终止界面原子位置的弛豫。此外，我们发现在结两侧插入的单一氧化层大大降低了MTJ在平行磁化下的隧道电导。我们得出结论，氧化结中Mn原子位置的弛豫降低了Co2 MnSi电极和MgO势垒之间Δ1态的耦合，并导致氧化层处具有Δ1对称性的多数自旋电子的显著界面散射。
We investigate and discuss the effects of interfacial oxidation on electronic structures and tunnel conductance of the Co2MnSi/MgO/Co2MnSi(001) magnetic tunnel junction (MTJ) on the basis of first-principles calculations. It is found that the MnSi termination tends to be oxidized compared with the Co termination because of the relaxation of atomic positions in the MnSi-terminated interface. Furthermore, we found that the single oxide layer inserted on both sides of the junction greatly decreases the tunnel conductance of the MTJ in parallel magnetization. We concluded that the relaxation of the Mn atomic position in the oxidized junction reduces the coupling of the Δ1 states between the Co2MnSi electrode and the MgO barrier and causes significant interfacial scattering of the majority-spin electrons with Δ1 symmetry at the oxidized layer.