Growing of bulk sapphire single crystals using laser material deposition
Growing of bulk sapphire single crystals using laser material deposition
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DOI：
10.2351/1.4983638
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发表时间：
2017-05-01
影响因子：
2.1
通讯作者：
Poprawe, R.
中科院分区：
文献类型：
--
作者：
Wilms, M. B.;Biermann, T.;Poprawe, R.
通过基于粉末的激光增材制造生长氧化物单晶的设备已经建立并成功测试。蓝宝石单晶作为演示材料已经生长，以证明这种技术的能力。直径为25.4mm的蓝宝石籽晶盘在高温炉中加热至1550摄氏度。CO_2激光束通过盖上的小孔照射种子盘。同时，通过陶瓷管将Al2O3粉末送入炉中。熔融材料在晶种材料上以完全相同的结晶取向固化，从而保持单晶结构。产生高度为几毫米的无裂纹单晶。(C)2017年美国激光学会。
A device to grow oxide single crystals via powder based laser additive manufacturing has been built and successfully tested. Single crystals of sapphire as demonstrator materials have been grown to prove the ability of this technique. A sapphire seed disk with a diameter of 25.4mm is heated in a high temperature furnace up to 1550 degrees C. Through a hole of the furnace-lid, the seed disk is irradiated by CO2 laser radiation. Simultaneously, Al2O3 powder is fed into the furnace via ceramic tubes. The molten material solidifies on the seed material with exactly the same crystallographic orientation, thus retaining the single crystal structure. A crack free single crystal of a few millimeters in height is produced. (C) 2017 Laser Institute of America.