Localization of light in a disordered medium
Localization of light in a disordered medium
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DOI：
10.1038/37757
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发表时间：
1997-12-25
期刊：
影响因子：
64.8
通讯作者：
Righini, R
中科院分区：
文献类型：
--
作者：
Wiersma, DS;Bartolini, P;Righini, R
无序材料预测的不寻常输运特性之一是安德森局域化（1）现象，这是电子输运行为中由无序引起的相变，从经典扩散状态（其中众所周知的欧姆定律成立）到材料表现为绝缘体的局域状态，该效应起源于电子的干扰，这些电子已经经历了由缺陷引起的多次散射。 固体（2-10），电磁波的多重散射预计会出现类似的现象，但有一个重要的简化：与电子不同，光子不会相互相互作用。这使得无序材料中的光子传输成为研究安德森局域化的理想模型系统(10-17)。在这里，我们报告了在强散射半导体粉末上进行的光学实验中光的安德森定位的直接实验证据。
Among the unusual transport properties predicted for disordered materials is the Anderson localization(1) phenomenon, This is a disorder-induced phase transition in the electron-transport behaviour from the classical diffusion regime, in which the well-known Ohm's law holds, to a localized state in which the material behaves as an insulator, The effect finds its origin in the interference of electrons that have undergone multiple scattering by defects in the solid(2-10), A similar phenomenon is anticipated for multiple scattering of electromagnetic waves, but with one important simplification: unlike electrons, photons do not interact with one another. This makes transport of photons in disordered materials an ideal model system in which to study Anderson localization(10-17). Here we report direct experimental evidence for Anderson localization of light In optical experiments performed on very strongly scattering semiconductor powders.