Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence.
Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence.
复制标题
DOI：
10.1364/oe.16.005158
复制
发表时间：
2008-03
期刊：
影响因子：
3.8
通讯作者：
W. Zhao;G. Ran;Z. W. Liu;Z. Bian;K. Sun;W. Xu;C. Huang;G. Qin
中科院分区：
文献类型：
--
作者：
W. Zhao;G. Ran;Z. W. Liu;Z. Bian;K. Sun;W. Xu;C. Huang;G. Qin
硅光源在硅光电子学中起着关键作用，但其实现是一个极具挑战性的课题。尽管人们对这一课题进行了长期的深入研究，但硅基电致发光的功率转换效率（PCE）仍不超过1%。在本报告中，已经实现了高效硅光源。器件结构为p-Si（5 Omegacm）/ SiO2（约2 nm）/ NPB / CBP：（ppy）（2）Ir（acac）/ Bphen /Bphen：Cs2 CO 3/ Sm / Au。SiO2钝化的Si是具有适当高的空穴注入能力的阳极，CBP：（ppy）（2）Ir（acac）是高效的磷光体掺杂有机材料。器件的开启电压为3.2 V，最大亮度效率和最大发光功率效率分别达到69 cd/A和62 lm/W，对应的最大光电转换效率为12%，外量子效率为17%.
Silicon light source plays a key role in silicon optoelectronics, but its realization is an extremely challenging task. Although there are longterm intensive efforts to this topic, the power conversion efficiency (PCE) of the silicon-based electroluminescence is still no more than 1%. In this present report, a highly efficient silicon light source has been achieved. The device structure is p-Si (5 Omegacm)/ SiO2(approximately 2 nm)/ NPB / CBP: (ppy)(2)Ir(acac) / Bphen /Bphen: Cs2CO3 / Sm / Au. The SiO2 passivated Si is the anode having a suitably high hole-injection ability, and CBP: (ppy)(2)Ir(acac) is a highly efficient phosphor doped organic material. The device turn-on voltage is 3.2 V. The maximum luminance efficiency and maximum luminous power efficiency reach 69 cd/A and 62 lm/W, respectively, corresponding to a maximum PCE of 12% and an external quantum efficiency of 17%.