Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal- oxide-semiconductor technology
Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal- oxide-semiconductor technology
复制标题
低温形成高度可靠的氮化硅栅极电介质，并抑制先进的互补金属氧化物半导体技术的软击穿现象
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
Anri Nakajima
中科院分区：
文献类型：
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作者：
三宅亜紀;Anri Nakajima;Anri Nakajima;Hiroko Kominami;葛西哲郎;大原賢治;A.Miyake;T.Aoki;石井紘之;三宅亜紀;石井紘之;A.Miyake;中村 篤志;Anri Nakajima;Y.Shimuzu;Anri Nakajima;Y.Shimizu;Anri Nakajima;清水克美;Quazi D.M.Khosru;三宅亜紀;Quazi D.M.Khosru;三宅亜紀;Anri Nakajima;近藤祐一;Anri Nakajima;三宅亜紀;Anri Nakajima;Anri Nakajima;三宅亜紀;Hiroyuki Ishii;Y.Nakanishi;A.Miyake;Y.Nakanishi;A.Miyake;吉元隆史;Y.Kondoh;木寺俊郎;三宅亜紀;石井紘之;清水克美;Anri Nakajima;清水克美;三宅亜紀;Quazi D.M.Khosru;A.Miyake;Anri Nakajima
