Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
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在 SiO2 上的薄 Nb 阻挡层上形成优先取向的 Cu[111] 层
DOI：
10.1143/jjap.45.9172
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
A. Noya
中科院分区：
文献类型：
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作者：
M. Maniruzzaman;M. Takeyama;Masaru Sato;Y. Hayasaka;E. Aoyagi;A. Noya
沉积在薄Nb层上的优先取向Cu[111]的织构的特征在于Cu/Nb/SiO2/Si的薄膜堆叠结构，试图在极薄的扩散阻挡层上制备互连的Cu[111]种子层。在不同厚度的[110]取向Nb膜上都能得到Cu[111]层，但Cu[111]织构的镶嵌扩展取决于下面Nb膜的厚度。对于100 nm厚的Nb层上的Cu[111]层，ω-摇摆曲线测量的半峰全宽为103 °，对于20 nm和10 nm厚的Nb层，该半峰全宽分别增加到104 °和105 °。透射电子显微镜揭示了10 nm厚的Nb层组成的细相对镶嵌蔓延[110]晶粒，这是由于在SiO2上的柱状结构的Nb膜的成核型生长的初始阶段。结果表明，在厚度为10 nm的极薄Nb层上获得了镶嵌性较好的Cu[111]织构。
The texture of preferentially oriented Cu[111] deposited on a thin Nb layer is characterized in a thin-film stacked structure of Cu/Nb/SiO2/Si in an attempt to prepare a Cu[111] seed layer of interconnects on an extremely thin diffusion barrier. The Cu[111] layer is obtained on Nb films of [110] orientation at various thicknesses; however, the mosaic spread of Cu[111] texture depends on the thickness of Nb film underneath. The full width at half maximum of the ω-rocking curve measurement is ∼3° for the Cu[111] layer on a 100-nm-thick Nb layer, which increases to ∼4 and ∼5° for that on 20- and 10-nm-thick Nb layers, respectively. Transmission electron microscopy reveals the 10-nm-thick Nb layer consisting of fine relatively mosaic-spread [110] grains, which is a result of the initial stage of the nucleation type growth of the Nb film in a columnar structure on SiO2. It is revealed that the Cu[111] texture of relatively good mosaicity in a columnar structure is obtained on an extremely thin Nb layer of 10 nm thickness.