Development of Fully Printed Electrolyte-Gated Oxide Transistors Using Graphene Passive Structures
Development of Fully Printed Electrolyte-Gated Oxide Transistors Using Graphene Passive Structures
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DOI：
10.1021/acsaelm.9b00313
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发表时间：
2019-08-01
影响因子：
4.7
通讯作者：
Breitung, Ben
中科院分区：
文献类型：
--
作者：
Singaraju, Surya Abhishek;Baby, Tessy Theres;Breitung, Ben
在过去的十年中，印刷电子学的主题因其在许多实际应用中的潜在用途而获得了很多关注，包括生物传感器、光伏器件、RFID、柔性显示器、大面积电路等。为了完全实现印刷电子元件和器件，首先需要开发用于在印刷器件中印刷无源结构以及电和化学相容材料的有效技术。使用导电石墨烯油墨的机会将使无源结构能够集成到有源器件中，例如印刷电解质门控晶体管（EGT）。因此，在这项研究中，我们提出了在完全印刷的电解质门控晶体管上获得的参数结果，该晶体管具有石墨烯作为无源电极，无机氧化物半导体作为有源沟道，以及复合固体聚合物电解质（CSPE）作为栅极绝缘材料。这种配置提供了高的化学和电稳定性，同时允许EGT在低电位下操作，这意味着在低输入电压下操作的明显优势。我们开发的印刷面内EGT表现出优异的性能，器件迁移率高达16 cm（2）s（-1），I-ON/I-OFF比为10（5），亚阈值斜率为120 mV dec（-1）。
During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm(2) s(-1), an I-ON/I-OFF ratio of 10(5), and a subthreshold slope of 120 mV dec(-1).