Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles.
Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles.
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DOI：
10.1021/acs.nanolett.5b01311
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发表时间：
2015-04
期刊：
影响因子：
10.8
通讯作者：
A. Yan;J. Velasco;S. Kahn;Kenji Watanabe;T. Taniguchi;Feng Wang;M. Crommie;A. Zettl
中科院分区：
文献类型：
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作者：
A. Yan;J. Velasco;S. Kahn;Kenji Watanabe;T. Taniguchi;Feng Wang;M. Crommie;A. Zettl
单层二硫化钼(MoS_2)是一种很有前途的二维直接带隙半导体材料，在原子薄和柔性电子学中具有潜在的应用前景。六方氮化硼(h-BN)是MoS_2(以及石墨烯等相关材料)的一种有吸引力的绝缘衬底或对偶。MoS_2和h-BN的堆积异质结已通过人工转移方法制备，但需要一种更高效和可扩展的组装方法。在这里，我们展示了用化学气相沉积(CVD)方法在h-BN上直接生长单层和几层MoS_2，这种方法可以通过适当的结构衬底来扩展。单层和少层样品的生长机制不同，单层样品的MoS_2和h-BN晶格之间的相对旋转角较小(<；5°)占优势。此外，直接生长在h-BN上的MoS_2保持了1.89 eV的本征带隙。我们的CVD合成方法是朝着可控和可扩展的MoS2基电子器件的方向发展的重要进展。
Monolayer molybdenum disulfide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS2-based electronic devices.